Active and preferred
RoHS Compliant
Lead-free

IDH06G65C6

Unparalleled efficiency and price performance
Data Sheet
package
board
ea.
in stock

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IDH06G65C6
IDH06G65C6
ea.
Data Sheet

Product details

  • I(FSM) max
    38 A
  • IF max
    6 A
  • IR
    0.6 µA
  • Package
    TO220
  • Ptot max
    54 W
  • QC
    9.6 nC
  • Qualification
    Industrial
  • RthJC
    1.7 K/W
  • VF
    1.25 V
Recommended
OPN
IDH06G65C6XKSA1
Product Status active and preferred
Infineon Package
PG-TO220-2
Package Name TO220
Packing Size 500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO220-2
Package Name TO220
Packing Size 500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F).

Features

  • The lowest V F: 1.25V
  • Best-in-class figure of merit (Q c x V F)
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High dv/dt ruggedness
  • Optimized thermal behavior

Benefits

  • Improved system efficiency over all load conditions
  • Increased system power density
  • Reduced cooling requirements and increased system reliability
  • Enables extremely fast switching
  • Easy and effective match with CoolMOS™ 7 families
  • Optimal price performance

Documents

Documents

Design resources

Partner solutions

Developer community

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