Active
RoHS Compliant
Lead-free

BGS14PN10

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in stock

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BGS14PN10
BGS14PN10
ea.

Product details

  • Control Interface
    GPIO
  • Frequency Range
    0.5 - 6.0 GHz
  • Insertion Loss (@1GHz)
    0.18 dB
  • Isolation (@1GHz)
    41 dB
  • Pmax max
    40 dBm
  • Supply Voltage
    1.8 - 3.6 V
  • Switch Type
    SP4T
OPN
BGS14PN10E6327XTSA1
Product Status active
Infineon Package
Package Name N/A
Packing Size 7500
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 7500
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The BGS14PN10 is a Single Pole Quad Throw (SP4T) high linearity, high power RF switch optimized for mobile phone applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a two simple, CMOS or TTL compatible control input signals. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS14PN10 enables critical band combinations for UL (B1 + B3), (B2+B4), DL-CA (B4 + B12) and SV-LTE (B5 + B13). This device handles very high transmitting signal levels of up to 38 dBm, while at the same time exhibiting low losses to conserve battery power. Ultra high linearity devices have a significant impact on system sensitivity. For instance, 3 dBm more linearity in whole RF-front-end leads to 6 dB better signal-to-noise ratio. Hence, data rate speed is improved by up to 40% allowing a step e.g. from 20 Mbps (QAM16 4/5) to 33 Mbps (QAM64 4/5). The BGS14PN10 stands for Best-in-Class ISO and IL performance across all frequencies.

Features

  • High max RF power: 38 dBm
  • Two ultra-low loss ports (RF1 and RF3):
  • 0.19 dB @ f=0.9 GHz, PIN=38dBm
  • 0.29 dB @ f=1.9 GHz, PIN=38dBm
  • 0.51 dB @ f=2.7 GHz, PIN=33dBm
  • 1.20 dB @ f=3.8 GHz, PIN=33dBm
  • 1.90 dB @ f=5.8 GHz, PIN=33dBm
  • Two low loss ports (RF2 and RF4):
  • 0.32 dB @ f=0.9 GHz, PIN=38dBm
  • 0.40 dB @ f=1.9 GHz, PIN=38dBm
  • 0.64 dB @ f=2.7 GHz, PIN=33dBm
  • 1.19 dB @ f=3.8 GHz, PIN=33dBm
  • 1.78 dB @ f=5.8 GHz, PIN=33dBm
  • No DC decoupling components required, if no external DC is
  • applied on RF ports
  • High ESD robustness
  • Low harmonic generation
  • High linearity
  • RF1/RF3 72 dBm IIP3
  • RF2/RF4 74 dBm IIP3
  • No power supply blocking required
  • Supply voltage range: 1.8 to 3.6V
  • No insertion loss change within supply voltage range
  • No linearity change within supply voltage range
  • 0.5 to 6.0 GHz coverage
  • Small form factor 1.1 mm x 1.5 mm
  • 400 µm pad pitch
  • RoHS and WEEE compliant package

Applications

Documents

Design resources

Developer community

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