Active and preferred
RoHS Compliant
Lead-free

BFP842ESD

ea.
in stock

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BFP842ESD
BFP842ESD
ea.

Product details

  • fT
    57 GHz
  • Gmax
    26 dB @900 MHz
  • IC max
    40 mA
  • NFmin
    0.45 dB @900 MHz
  • OIP3 (@900 MHz)
    22.5 dBm
  • OP1dB (@900 MHz)
    7 dBm
  • Ptot
    150 mW
  • VCEO max
    3.25 V
OPN
BFP842ESDH6327XTSA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.

Features

  • Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1.5kV HBM ESD hardness
  • High transition frequency fT = 57 GHz enables best in class noise performance at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
  • High gain Gma = 17.5 dB at 3.5 GHz, 2.5 V, 15 mA
  • OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
  • Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require corresponding collector resistor

Applications

Documents

Design resources

Developer community

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