Active and preferred
RoHS Compliant
Lead-free

AIMBG120R040M1

CoolSiC™ Automotive MOSFET 1200V G1p in D2PAK-7 package
ea.
in stock

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AIMBG120R040M1
AIMBG120R040M1
ea.

Product details

  • Ciss
    1264 pF
  • Coss
    63 pF
  • ID (@25°C) max
    54 A
  • Launch year
    2023
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO-263-7
  • Planned to be available until at least
    2033
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    268 W
  • QG
    43 nC
  • Qualification
    Automotive
  • RDS (on) (@ Tj = 25°C)
    40 mΩ
  • RthJC max
    0.56 K/W
  • Technology
    CoolSiC™ G1
  • VDS max
    1200 V
  • VGSS, off
    0
  • VGSS, on
    20
OPN
AIMBG120R040M1XTMA1
Product Status active and preferred
Infineon Package
Package Name D2PAK 7-pin
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name D2PAK 7-pin
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Features

  • Wide input voltage range 3.0 - 17 V
  • Fast COT with no ext compensation
  • Support FCCM & DEM
  • Pin programmable Vout, Fsw
  • PMBUS interface for reporting
  • 5 mm x 6 mm PQFN
  • Pb-free, ROHS2 compliant with ex. 7a

Benefits

  • Superior transient response
  • Accurate output voltage regulation
  • High efficiency and high power density
  • Fast constant on-time PWM engine

Documents

Design resources

Developer community

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