Active and preferred
RoHS Compliant
Lead-free

2N7002

N-channel enhancement mode Field-Effect Transistor (FET), 60V, SOT-23
Data Sheet
package
board
ea.
in stock

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2N7002
2N7002
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.02
  • Ciss
    13 pF
  • Coss
    4.1 pF
  • ID (@25°C) max
    0.3 A
  • IDpuls max
    1.2 A
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    SOT-23
  • Polarity
    N
  • Ptot max
    0.5 W
  • QG (typ @10V)
    0.4 nC
  • RDS (on) (@10V) max
    3000 mΩ
  • RthJA max
    250 K/W
  • Special Features
    Small Signal
  • VDS max
    60 V
  • VGS(th)
    2.1 V
Recommended
OPN
2N7002H6327XTSA2
Product Status active and preferred
Infineon Package
PG-SOT23-3
Package Name SOT-23
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-SOT23-3
Package Name SOT-23
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The 2N7002 is an n-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.

Features

  • Enhancement mode
  • Logic Level
  • Avalanche rated
  • Fast switching
  • Pb-free lead-plating
RoHS compliant
  • Halogen-free

    • Documents

    Documents

    Design resources

    Partner solutions

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