Active and preferred
RoHS Compliant
Lead-free

1EDN7116U

200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

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1EDN7116U
1EDN7116U

Product details

  • Channels
    1
  • Configuration
    High-side
  • Input Vcc
    4.2 V to 11 V
  • Output Current (Source)
    2 A
  • Output Current (Sink)
    2 A
  • Output Current
    2 A
  • Package
    PG-TSNP-7
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    55 ns
  • Turn On Propagation Delay
    55 ns
  • VCC UVLO
    3.75 V
  • Voltage Class
    200 V
OPN
1EDN7116UXTSA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 4500
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name -
Packing Size 4500
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The 1EDN7116U is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including Truly Differential Input (TDI), 2 A peak source and sink current, active Miller clamp, and bootstrap voltage clamp.

Features

  • Fully differential logic input circuitry to avoid false triggering in low-side or high-side operation
  • High common-mode input voltage range (CMR) up to ± 200 V for high side operation
  • High immunity to common-mode slew rate (100 V/ns) for robust operation during fast switching transients
  • Compatible with 3.3 V or 5 V input logic
  • 2 A source/sink current capability
  • Active Miller clamp with 5 A sink capability to avoid induced turn-on
  • Active bootstrap clamping
  • Suitable for driving GaN HEMTs or Si MOSFETs
  • Qualified according to JEDEC for target applications

Benefits

  • High side driving and low side ground bounce immunity during fast switching transitions
  • Optimized switching speed without external gate resistors, by choosing from the family of 1EDN71x6x drivers 
  • Induced turn-on immunity during fast switching transitions
  • Regulated bootstrap voltage, by eliminating bootstrap capacitor overcharging during dead-time

Documents

Design resources

Developer community

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