Our new Automotive CoolSiC™ MOSFET 1200 V in Q-DPAK is tailored to address OBC/DC-DC applications for 800V Automotive architecture: leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.

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Top side cooled 1200V CoolSiC MOSFETs in Q-DPAK package for automotive applications

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Automotive CoolSiC™ MOSFET 1200 V in Q-DPAK (top-side cooling package)
Infineon unleash outstanding top-side cooling performance with CoolSiC™ Automotive MOSFET 1200 V in QDPAK package
1200v-qdpk
1200v-qdpk
1200v-qdpk
  • 0 V turn-off
  • Creepage  4.8 mm
  • Symmetrical lead layout
  • .XT technology
  • Lower package parasitics
  • Lower switching losses
  • Simplified design
  • Optimized PCB assembly

Based on  SiC Gen1p technology, thanks to a 0V turn-off, it enables unipolar gate driving thus simplifying the design with less components on the PCB. With a creepage of 4.8mm, the package can achieve a working voltage exceeding 900V, with no additional coating for isolation. Customers benefit from lower package parasitics, experience lower switching losses and ease of design thanks to a symmetrical lead layout for higher thermal-cycling performance. Diffusion soldering of the chip through “.XT Technology” further improves the thermal dissipation.

1200v-qdpk-technology-benefits
1200v-qdpk-technology-benefits
1200v-qdpk-technology-benefits

CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK addresses design requirements of Automotive Tier1 and OEM for On-board Charger and DC-DC converters for Electric Vehicles,  enabling a system solution approach with an easy assembling (same package thickness, same gap filler) together with other TSC  Infineon packages.

1200v-qdpk-design
1200v-qdpk-design
1200v-qdpk-design