Active and preferred

EVAL_2EDB_HB_GAN

CoolGaN™ GIT HEMT half-bridge evaluation board with EiceDRIVER™ 2EDB8259Y
Application Notes

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EVAL_2EDB_HB_GAN
EVAL_2EDB_HB_GAN
Application Notes

Product details

  • Dimensions
    76,7x 74,3 x 1,6
  • Family
    High/Low Side Switch
  • Frequency max
    2000 kHz
  • Input Type
    DC
  • Interfaces
    7-pole position terminal block, 2-pole position terminal block with 5.08mm pitch
  • Iout
    Depends on the topology and frequency
  • Mounting
    screw driver for cables connection
  • Output Voltage
    0 V to 450 V
  • Qualification
    Industrial
  • Sub Application
    Industrial
  • Supply Voltage
    0 V to 450 V
  • Target Application
    Server and Telecom switch-mode power supplies (SMPS), EV Off-board chargers, Solar micro inverter, Industrial power supplies (SMPS, Residential UPS)
  • Topology
    Half Bridge
Recommended
OPN
EVAL2EDBHBGANTOBO1
Product Status active and preferred
Infineon Package --
Package Name N/A
Packing Size 1
Packing Type CONTAINER
Moisture Level N/A
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package --
Package Name -
Packing Size 1
Packing Type CONTAINER
Moisture Level -
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The EVAL_2EDB_HB_GaN facilitates testing of Infineon CoolGaN™ GIT HEMT with EiceDRIVER™ 2EDB8259Y. It supports configuration of the auxiliary supply as bipolar or unipolar, isolated or non-isolated, with or without bootstrap, and is suitable for buck or boost-mode, double-pulse testing, continuous PWM operation, and hard-/soft-switching at high power levels and MHz frequencies, eliminating the need for custom gate driver and power circuit design.

Features

  • Simple GaN half-bridge with dedicated GaN driver ICs
  • Configurable auxiliary supply: unipolar vs. bipolar (with regulation on positive or negative rail), isolated vs non-isolated (bootstrap)
  • Shunt on low-side GaN for current measurement

Benefits

  • Easy setup and use
  • Enable testing with different configurations (Buck, Boost, Direct and Reverse Double Pulse)
  • Evaluate high-frequency capabilities of GaN
  • Evaluate waveforms with low ringing, overshoot, EMI
  • Enables easy evaluation at multi-kilowatt power levels
  • Shoot-through check and Eoss measurements via current shunt

Applications

Bill of Material

Documents

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Design resources

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