Active and preferred

EVAL-1ED3122MX12H

Evaluation board for 1ED3122MX12H - 2300 V, 10 A, 5.7 kV (rms) single-channel isolated gate driver
ea.
in stock

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EVAL-1ED3122MX12H
EVAL-1ED3122MX12H
ea.

Product details

  • Board Type
    Evaluation Board
  • Family
    IGBT Discrete, CoolSiC™ MOSFET, Gate Driver
  • Input Type
    DC
  • Product Name
    EVAL-1ED3122MX12H
  • Qualification
    Industrial
  • Sub Application
    Server, Telecommunication
  • Supply Voltage
    16 V
  • Target Application
    EV Charger, Industrial Drives, Induction Heating, Power Supplies, Commercial Air Conditioning, Solar Energy Systems
  • Topology
    Half Bridge
OPN
EVAL1ED3122MX12HTOBO1
Product Status active and preferred
Infineon Package --
Package Name N/A
Packing Size 1
Packing Type CONTAINER
Moisture Level N/A
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package --
Package Name -
Packing Size 1
Packing Type CONTAINER
Moisture Level -
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The EVAL-1ED3122MX12H features a half-bridge configuration with 1ED3122MU12H gate driver ICs for IGBTs and SiC MOSFETs, along with TRENCHSTOP™ IGBT IKQ75N120CH3. It includes an additional gate driver IC for isolated over-current feedback and is ideal for double-pulse testing. The 1ED3122MU12H provides an active Miller clamp, stable timing, active shutdown, and short-circuit clamping over a wide supply voltage range, unipolar or bipolar.

Features

  • Single channel isolated gate driver
  • For < 2300 V IGBT, SiC & Si MOSFET
  • 2300 V funct. offset volt. capable
  • Galvanically isolated
  • 10 A typ. sink & source peak outp.
  • 40 V absolute max. output voltage
  • 90 ns propagation delay
  • High CMTI >200 kV/μs
  • Active Miller clamp
  • Short-circuit clamping
  • DSO-8 300 mil wide-body package
  • 8 V/10 V UVLO protection

Documents

Design resources

Developer community

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