650 V CoolMOS™ CFD2

Balance between efficiency and robustness with a fast body diode

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Overview

CoolMOS™ CFD2 superjunction (SJ) MOSFET family features MOSFETs with an integrated fast body diode. CFD2 devices benefit from optimized soft commutation behavior and therefore mitigate EMI. In addition, light load efficiency, reduced gate charge, easy implementation, and outstanding reliability complement the advantages of this superjunction MOSFET technology. This technology is superseded by the CoolMOS™ CFD7.

Key Features

  • 650 V technology & fast body diode
  • Small voltage overshoot
  • Tight RDS(on)distribution
  • Small reverse recovery loss

Products

About

650 V CoolMOS™ CFD2 superjunction (SJ) MOSFETs with fast body diode

With the 650 V CoolMOS™ CFD2, Infineon launched its second generation of its market-leading high-voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of the 600 V CFD with improved energy efficiency.

The softer commutation behavior and therefore better EMI behavior give this product a clear advantage in comparison to competitor parts. CFD2 is the first 650 V MOSFET technology with an integrated fast body diode on the market.

The product portfolio provides all the benefits of fast-switching superjunction MOSFETs, offering better light load efficiency, reduced gate charge, easy implementation, and outstanding reliability. The CFD2 technology offers lower prices compared to its predecessor, the 600 V CFD, and is tuned for resonant switching applications.

CoolMOS™ CFD2 packages and product portfolio

The 650 V CoolMOS™ CFD2 superjunction (SJ) MOSFETs are offered in both SMD packages (D2PAK (TO-263), DPAK (TO-252), Thin-PAK 8x8) and through-hole (TO-220, isolated TO-220 Full-PAK, TO-247).

The device range covers 41 mΩ/68.5 A to 950 mΩ/3.9 A ratings.

Highest ease-of-use for fast design-in

CoolMOS™ CFD2 SJ MOSFET comes with a very low voltage overshoot and minimal ringing behavior. Reduced gate spikes combined with the high safety margin of 200 V enable fast design-in without the need for additional ringing control. This makes them a popular choice for ZVS phase-shifted full bridge, LLC topologies, AC/DC bridge, and 3-level inverters.

Highest reliability from lowest REV recovery charge & REV recovery time

Hard commutation prevails in ZVS topologies and requires a device with excellent fast body diode performance, dependent on a low Qrr (reverse recovery charge) and Trr (reverse recovery time). The fast reverse recovery of CoolMOS™ CFD2 offers designers the benefits of reduced stress on the device while the body diode is not fully recovered and an extra safety margin for repetitive hard commutation in designs, which translates into reduced design-in effort.

650 V CoolMOS™ CFD2 superjunction (SJ) MOSFETs with fast body diode

With the 650 V CoolMOS™ CFD2, Infineon launched its second generation of its market-leading high-voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of the 600 V CFD with improved energy efficiency.

The softer commutation behavior and therefore better EMI behavior give this product a clear advantage in comparison to competitor parts. CFD2 is the first 650 V MOSFET technology with an integrated fast body diode on the market.

The product portfolio provides all the benefits of fast-switching superjunction MOSFETs, offering better light load efficiency, reduced gate charge, easy implementation, and outstanding reliability. The CFD2 technology offers lower prices compared to its predecessor, the 600 V CFD, and is tuned for resonant switching applications.

CoolMOS™ CFD2 packages and product portfolio

The 650 V CoolMOS™ CFD2 superjunction (SJ) MOSFETs are offered in both SMD packages (D2PAK (TO-263), DPAK (TO-252), Thin-PAK 8x8) and through-hole (TO-220, isolated TO-220 Full-PAK, TO-247).

The device range covers 41 mΩ/68.5 A to 950 mΩ/3.9 A ratings.

Highest ease-of-use for fast design-in

CoolMOS™ CFD2 SJ MOSFET comes with a very low voltage overshoot and minimal ringing behavior. Reduced gate spikes combined with the high safety margin of 200 V enable fast design-in without the need for additional ringing control. This makes them a popular choice for ZVS phase-shifted full bridge, LLC topologies, AC/DC bridge, and 3-level inverters.

Highest reliability from lowest REV recovery charge & REV recovery time

Hard commutation prevails in ZVS topologies and requires a device with excellent fast body diode performance, dependent on a low Qrr (reverse recovery charge) and Trr (reverse recovery time). The fast reverse recovery of CoolMOS™ CFD2 offers designers the benefits of reduced stress on the device while the body diode is not fully recovered and an extra safety margin for repetitive hard commutation in designs, which translates into reduced design-in effort.

Documents

Documents

Design resources

Developer community

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