GaN transistors (GaN HEMTs)

Explore CoolGaN™ Transistors, discrete and integrated normally-off devices, ranging from 60 V up to 700 V, for highest efficiency and power density 

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Overview

Infineon’s gallium nitride (GaN) transistors are available in voltage ranges from 60 V up to 700 V. The fast turn-on and turn-off speeds with minimal switching losses are crucial for AI data centers, EVs, renewable energy, humanoid robots, consumer applications and many more. With various packages and rigorous qualifications exceeding industry standards, Infineon’s GaN devices enable high-frequency switching while reducing costs and system size. Elevate your designs with Infineon’s GaN transistors.

Key Features

  • 60 V - 700 V GaN transistors
  • Top and bottom side cooled packages
  • Ultrafast switching-speed
  • Superior FOMs
  • Continous current: 4 A - 100 A
  • RDS(on)typ. from 1.4 mΩ to 450 mΩ
  • Enhancement mode (e-mode)
  • No reverse-recovery charge
  • Ultra-low gate and output charge

Products

About

What are the benefits of Infineon’s GaN transistors?

•   Looking to enhance your system's efficiency? By utilizing Infineon's GaN transistors, you can significantly reduce switching losses, leading to improved overall system efficiency.

•   How about improving power density? With their higher switching frequencies, Infineon's GaN devices allow for smaller passive components, which can help reduce the overall size of your designs.

•   Want to reduce the weight of your system? Infineon's GaN transistors enable the use of fewer materials and smaller components, resulting in a reduced system weight. With their superior switching speed, these transistors deliver high power density while minimizing energy losses across various applications, empowering designers to create smaller, lighter, and more compact systems that still offer top performance.

When compared to traditional silicon (Si) switches, Infineon's GaN transistors feature higher thermal performance, which facilitates usage in high-current applications such as AI data centers and enhances reliability. Infineon’s CoolGaN™ Transistors are specifically designed for robustness, durability, and withstanding high voltage spikes ensuring a longer lifespan for your applications. 

Gate driver ICs for GaN

The right gate driver IC is inevitable, as it can help designers to achieve the best performance while minimizing costs. Our broad portfolio comprises single- and dual-channel isolated and non-isolated gate drivers tailor-made for GaN. Therein, also a family of single-channel non-isolated devices with truly differential inputs, namely, the EiceDRIVER™ 1EDN TDI family. 

Check out our EiceDRIVER™ portfolio, and learn about the gate driver ICs fitting your GaN designs.

Gate driver ICs for GaN
GaN packaging

The portfolio in the 60 V to 200 V range housed in the PQFN 3x3 and PQFN 3x5 packages has a moisture sensitivity level (MSL) rating of 1, which makes them suitable for standard storage and handling conditions.

In the high-voltage arena (≥600 V), we offer a very broad variety of SMD packages, ranging from TOLL, TOLT, ThinPAK 5x6, DFN 8x8, to top- and bottom-side cooled DSO. These packages cater to diverse design requirements and offer a perfect blend of compact size, improved thermal performance, cost-effectiveness, and design flexibility.

What are the types of GaN switches?

Did you know that terms like GaN HEMTs, GaN FETs, GaN transistors, and GaN power semiconductors are all terms used to reference to GaN transistor products?

• GaN HEMTs: The technical description for a type of GaN transistor using a high electron mobility transistor (HEMT) structure.

• GaN FETs: Casual reference to GaN transistors by those who have a long history with traditional silicon Field Effect Transistor technology.

• GaN transistors: A broader term encompassing GaN transistors which encapsulates HEMT and other, lessor used, transistor structures.

• GaN power semiconductors: A very broad term encompassing GaN transistors as discrete devices or those that also integrate additional functions such as sensing, drivers and more.

• CoolGaN™ Transistors: A specific type of GaN HEMT transistor developed by Infineon, known for high device performance, quality and reliability.

Interested in our CoolGaN™ solutions?

Infineon’s discrete and integrated GaN solutions deliver highest efficiency and power density in consumer, industrial, and automotive applications. If you are interested in our CoolGaN™ products and solutions, don’t hesitate to contact our GaN experts.

Get in touch with us

What are the benefits of Infineon’s GaN transistors?

•   Looking to enhance your system's efficiency? By utilizing Infineon's GaN transistors, you can significantly reduce switching losses, leading to improved overall system efficiency.

•   How about improving power density? With their higher switching frequencies, Infineon's GaN devices allow for smaller passive components, which can help reduce the overall size of your designs.

•   Want to reduce the weight of your system? Infineon's GaN transistors enable the use of fewer materials and smaller components, resulting in a reduced system weight. With their superior switching speed, these transistors deliver high power density while minimizing energy losses across various applications, empowering designers to create smaller, lighter, and more compact systems that still offer top performance.

When compared to traditional silicon (Si) switches, Infineon's GaN transistors feature higher thermal performance, which facilitates usage in high-current applications such as AI data centers and enhances reliability. Infineon’s CoolGaN™ Transistors are specifically designed for robustness, durability, and withstanding high voltage spikes ensuring a longer lifespan for your applications. 

Gate driver ICs for GaN

The right gate driver IC is inevitable, as it can help designers to achieve the best performance while minimizing costs. Our broad portfolio comprises single- and dual-channel isolated and non-isolated gate drivers tailor-made for GaN. Therein, also a family of single-channel non-isolated devices with truly differential inputs, namely, the EiceDRIVER™ 1EDN TDI family. 

Check out our EiceDRIVER™ portfolio, and learn about the gate driver ICs fitting your GaN designs.

Gate driver ICs for GaN

GaN packaging

The portfolio in the 60 V to 200 V range housed in the PQFN 3x3 and PQFN 3x5 packages has a moisture sensitivity level (MSL) rating of 1, which makes them suitable for standard storage and handling conditions.

In the high-voltage arena (≥600 V), we offer a very broad variety of SMD packages, ranging from TOLL, TOLT, ThinPAK 5x6, DFN 8x8, to top- and bottom-side cooled DSO. These packages cater to diverse design requirements and offer a perfect blend of compact size, improved thermal performance, cost-effectiveness, and design flexibility.

What are the types of GaN switches?

Did you know that terms like GaN HEMTs, GaN FETs, GaN transistors, and GaN power semiconductors are all terms used to reference to GaN transistor products?

• GaN HEMTs: The technical description for a type of GaN transistor using a high electron mobility transistor (HEMT) structure.

• GaN FETs: Casual reference to GaN transistors by those who have a long history with traditional silicon Field Effect Transistor technology.

• GaN transistors: A broader term encompassing GaN transistors which encapsulates HEMT and other, lessor used, transistor structures.

• GaN power semiconductors: A very broad term encompassing GaN transistors as discrete devices or those that also integrate additional functions such as sensing, drivers and more.

• CoolGaN™ Transistors: A specific type of GaN HEMT transistor developed by Infineon, known for high device performance, quality and reliability.

Interested in our CoolGaN™ solutions?

Infineon’s discrete and integrated GaN solutions deliver highest efficiency and power density in consumer, industrial, and automotive applications. If you are interested in our CoolGaN™ products and solutions, don’t hesitate to contact our GaN experts.

Get in touch with us

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