Overview

Introduced already in the 90th, we established the standard for high-voltage IGBT modules with the IHV. Years later, after this package was already adopted by all competition manufacturers and used in countless applications all over the world, Infineon still makes continuous improvements and equips this package with the latest technologies to enable upgrades for older designs of its worldwide users as well as new potentials.

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About

Introduction of the IHV 3300 V

The various uses and, in consequence, market leadership of the Infineon 3.3 kV IHV (IGBT high-voltage) modules are based on customers who especially like their supreme reliability in the harshest environmental conditions, proven by field-records over decades, and the unbeatable power density, which enables in consequence of their own success.

The latest generation of 3.3 kV IHV B, operating as a single switch-, chopper-, and diode topology, is offered in two package sizes (130 x 140 x 38 mm and 190 x 140 x 38 mm) at current ratings of 825 A to 2400 A and shines with enhanced power cycling capability, which is used by customers to extend the life of their designs and/or operate at higher performance.

Addressing customer requirements for energy efficiency, lifetime, reliability

The new enhanced IHV-B is the latest upgrade to this package group and enables as trimmed to switch similar an easy replacement to the current preferred choice (Infineon's IGBT 3) for any high-demanding application, running reliable at permanent and changing loads in daily demand, like HVDC, STATCOM, MVD, metro, locomotive, or high-speed train.

Moreover, its game-changing feature of life-time extension of factor 2, compared to all available competition and also our IGBT 3 products, is already worshiped by many market-leading customers, as these modules can combine the very latest high-voltage front- and backend technologies and decades of experience as market leader into the impressive performance upgrade of >40 percent without reliability decrease in the same size housing.

Key benefits IHV-B

The IHV-B incorporates important key benefits, e.g., high DC stability, standardized housing, package with CTI >600, best-in-class current density, low switching losses, easy paralleling on VCEsat with positive temperature coefficient, best-in-class short circuit capability, unbeatable robustness against overload and fault conditions, and safe operation up to 40y under harsh environmental conditions. Additional benefits of the enhanced IHV-B are the very low effort in using the advantages also in older designs, a 100 percent better power cycling curve, a feasible and possible 1:1 replacement with standard types, a 40 percent continuous RMS current increase at the same reliability, and the enabling of 30-50 percent smaller inverters.

Introduction of the IHV 3300 V

The various uses and, in consequence, market leadership of the Infineon 3.3 kV IHV (IGBT high-voltage) modules are based on customers who especially like their supreme reliability in the harshest environmental conditions, proven by field-records over decades, and the unbeatable power density, which enables in consequence of their own success.

The latest generation of 3.3 kV IHV B, operating as a single switch-, chopper-, and diode topology, is offered in two package sizes (130 x 140 x 38 mm and 190 x 140 x 38 mm) at current ratings of 825 A to 2400 A and shines with enhanced power cycling capability, which is used by customers to extend the life of their designs and/or operate at higher performance.

Addressing customer requirements for energy efficiency, lifetime, reliability

The new enhanced IHV-B is the latest upgrade to this package group and enables as trimmed to switch similar an easy replacement to the current preferred choice (Infineon's IGBT 3) for any high-demanding application, running reliable at permanent and changing loads in daily demand, like HVDC, STATCOM, MVD, metro, locomotive, or high-speed train.

Moreover, its game-changing feature of life-time extension of factor 2, compared to all available competition and also our IGBT 3 products, is already worshiped by many market-leading customers, as these modules can combine the very latest high-voltage front- and backend technologies and decades of experience as market leader into the impressive performance upgrade of >40 percent without reliability decrease in the same size housing.

Key benefits IHV-B

The IHV-B incorporates important key benefits, e.g., high DC stability, standardized housing, package with CTI >600, best-in-class current density, low switching losses, easy paralleling on VCEsat with positive temperature coefficient, best-in-class short circuit capability, unbeatable robustness against overload and fault conditions, and safe operation up to 40y under harsh environmental conditions. Additional benefits of the enhanced IHV-B are the very low effort in using the advantages also in older designs, a 100 percent better power cycling curve, a feasible and possible 1:1 replacement with standard types, a 40 percent continuous RMS current increase at the same reliability, and the enabling of 30-50 percent smaller inverters.

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