Overview

Wide-bandgap semiconductors allow higher electric field strengths and thus result in significantly smaller transistors compared to silicon alternatives. Consequently, GaN high electron mobility transistors (HEMTs) can operate at high switching frequencies without compromising efficiency. Many enhancement-mode GaN HEMTs use a Schottky-type gate to emulate a typical insulated MOSFET gate.

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CoolGaN™ SG HEMT key features

GaN Schottky Gate (SG) HEMTs can be driven by any gate driver compatible with the required driving voltage, typically 5 V. However, there are several key features that enable the highest level of performance from the switch, including:

  •  fast turn-on and turn-off slew rates in source and sink driving currents, along with low pull-up and pull-down resistance
  •  low-inductance packages with footprints and pin-outs compatible with an optimized GaN PCB layout
  •  robust common-mode voltage rejection at high dV/dt to support the fastest switching and lowest switching loss
  •  features to mitigate induced turn-on during high dV/dt, such as active Miller clamping and negative off-state driving voltage
  •  tight tolerances on propagation delays, enabling short dead-times
EiceDRIVER™ gate driver product portfolio for GaN SG HEMT

The 1EDN71x6Gx is a single-channel gate-driver IC product family optimized for driving Infineon's CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including truly differential input (TDI), four driving strength options, active Miller clamp, bootstrap voltage clamp, and with or without adjustable charge pump in PG-SON-10 and PG-TSNP-7 package respectively.

Learn more about our EiceDRIVER™ 1EDN71x6x family
CoolGaN™ SG HEMT target applications

High-efficiency and high-power density are key requirements for modern power electronics systems, which are enabled by state-of-the-art GaN HEMTs. The right gate driver IC can help designers to achieve the best performance in their GaN-based systems, while simultaneously minimizing R&D efforts and associated costs.

CoolGaN™ SG HEMT key features

GaN Schottky Gate (SG) HEMTs can be driven by any gate driver compatible with the required driving voltage, typically 5 V. However, there are several key features that enable the highest level of performance from the switch, including:

  •  fast turn-on and turn-off slew rates in source and sink driving currents, along with low pull-up and pull-down resistance
  •  low-inductance packages with footprints and pin-outs compatible with an optimized GaN PCB layout
  •  robust common-mode voltage rejection at high dV/dt to support the fastest switching and lowest switching loss
  •  features to mitigate induced turn-on during high dV/dt, such as active Miller clamping and negative off-state driving voltage
  •  tight tolerances on propagation delays, enabling short dead-times

EiceDRIVER™ gate driver product portfolio for GaN SG HEMT

The 1EDN71x6Gx is a single-channel gate-driver IC product family optimized for driving Infineon's CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including truly differential input (TDI), four driving strength options, active Miller clamp, bootstrap voltage clamp, and with or without adjustable charge pump in PG-SON-10 and PG-TSNP-7 package respectively.

Learn more about our EiceDRIVER™ 1EDN71x6x family

CoolGaN™ SG HEMT target applications

High-efficiency and high-power density are key requirements for modern power electronics systems, which are enabled by state-of-the-art GaN HEMTs. The right gate driver IC can help designers to achieve the best performance in their GaN-based systems, while simultaneously minimizing R&D efforts and associated costs.

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