Wide-bandgap semiconductors allow higher electric field strengths and thus result in significantly smaller high-voltage switches compared to silicon alternatives. Consequently, GaN-based power devices can operate at high switching frequencies without compromising efficiency. Infineon’s CoolGaN™ gate injection transistor (GIT) technology is based on a hybrid-drain HEMT with a p-GaN gate resulting in a robust normally off power switch.

  • Fast turn-on and turn-off slew rate
  • Short propagation delay
  • Extended CMTI robustness
  • Undervoltage lookout options
  • Shoot-through protection option
  • Dead-time control (DTC) option
  • Fast output clamping
  • Low impedance outputs

Products

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To deal with the particularities of the concept of Infineon’s CoolGaN™ gate injection transistor, an innovative differential gate-drive concept has been implemented in tailor-made gate driver ICs of the EiceDRIVER™ 1EDx56x3 product family. CoolGaN™ e-mode HEMTs are best driven by Infineon’s EiceDRIVER™ ICs, the 1EDF5673K, 1EDF5673F, and 1EDS5663H. They ensure robust and highly efficient, high-voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time to market.

Dual-channel drivers of the EiceDRIVER™ 2EDxx259 product family feature dead-time control (DTC) and shoot-through protection (STP) to ensure safe operation in half-bridge topologies using a single IC. A hybrid gate driving configuration for half-bridge topologies, composed of two single-channel gate driver ICs of the EiceDRIVER™ 1EDBx275F and 1EDNx550B, allows optimizing the driver IC placement on the PCB to minimize the gate loop parasitic inductances. This results in a PCB area saving (compared with a dual-channel gate driver IC) and it comes with a highly competitive bill-of-material (BOM).

The gate driver ICs for 650 V GaN HEMTs offer a number of advantages, including a safe off-state with extremely fast transients and low switching losses. Low dead time and excellent immunity to switching noise are also available. Other features include hardware-based protection to stay in the safe operating range and avoidance of spurious starts, even on the first pulse or after burst mode operation. They also allow reliable operation at high switching frequencies. 

To deal with the particularities of the concept of Infineon’s CoolGaN™ gate injection transistor, an innovative differential gate-drive concept has been implemented in tailor-made gate driver ICs of the EiceDRIVER™ 1EDx56x3 product family. CoolGaN™ e-mode HEMTs are best driven by Infineon’s EiceDRIVER™ ICs, the 1EDF5673K, 1EDF5673F, and 1EDS5663H. They ensure robust and highly efficient, high-voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time to market.

Dual-channel drivers of the EiceDRIVER™ 2EDxx259 product family feature dead-time control (DTC) and shoot-through protection (STP) to ensure safe operation in half-bridge topologies using a single IC. A hybrid gate driving configuration for half-bridge topologies, composed of two single-channel gate driver ICs of the EiceDRIVER™ 1EDBx275F and 1EDNx550B, allows optimizing the driver IC placement on the PCB to minimize the gate loop parasitic inductances. This results in a PCB area saving (compared with a dual-channel gate driver IC) and it comes with a highly competitive bill-of-material (BOM).

The gate driver ICs for 650 V GaN HEMTs offer a number of advantages, including a safe off-state with extremely fast transients and low switching losses. Low dead time and excellent immunity to switching noise are also available. Other features include hardware-based protection to stay in the safe operating range and avoidance of spurious starts, even on the first pulse or after burst mode operation. They also allow reliable operation at high switching frequencies. 

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