Our prime diode disc series consist of robust and powerful disc device types developed for the special requirements of medium-voltage IGCT inverter applications. All devices are designed for high surge current capability. For IGCT inverter applications in particular, they are optimized to achieve excellent soft recovery behavior even under the most demanding turn-off conditions.

  • Robust and powerful device types
  • High surge current capability
  • Excellent soft recovery behavior
  • Outstanding dynamic parameters

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High-tech production processes deliver outstanding dynamic parameters for best-cost designs with extreme soft recovery behavior to avoid overvoltage at the IGCT device. For some applications they are also suitable as clamping or freewheeling diodes for presspack IGBTs under significantly more demanding turn-off di/dt conditions.

This results in benefits such as a simplified mechanical stack construction with series stacking of press-pack IGBTs and freewheeling diodes. In addition, a time saving of 50% in stack design, fewer safety devices required thanks to high overload capability and an ideal applicability for building of gigawatt HVDC installations with low power losses.

We offer optimized freewheeling and clamping diodes for medium voltage IGCT inverters and medium voltage PressPACK IGBT inverters. Those diodes have an excellent soft recovery behavior even under most demanding turn-off conditions to avoid overvoltage at the switching device. Major benefits of freewheeling and clamping diodes for medium voltage IGCT Inverters, marked as SH-Diodes, are soft switching behavior optimized for IGCT devices and current turn-off capability up to 5 kA/µs. Major benefits of freewheeling and clamping diodes for medium voltage PPI inverters, marked as U-Diodes, are soft switching behavior optimized for IGCT or IGBT devices, current turn-off capability up to 5 kA/µs and less snubber effort. Super low loss freewheeling diodes offer in addition up to 25% reduced on state losses.

High-tech production processes deliver outstanding dynamic parameters for best-cost designs with extreme soft recovery behavior to avoid overvoltage at the IGCT device. For some applications they are also suitable as clamping or freewheeling diodes for presspack IGBTs under significantly more demanding turn-off di/dt conditions.

This results in benefits such as a simplified mechanical stack construction with series stacking of press-pack IGBTs and freewheeling diodes. In addition, a time saving of 50% in stack design, fewer safety devices required thanks to high overload capability and an ideal applicability for building of gigawatt HVDC installations with low power losses.

We offer optimized freewheeling and clamping diodes for medium voltage IGCT inverters and medium voltage PressPACK IGBT inverters. Those diodes have an excellent soft recovery behavior even under most demanding turn-off conditions to avoid overvoltage at the switching device. Major benefits of freewheeling and clamping diodes for medium voltage IGCT Inverters, marked as SH-Diodes, are soft switching behavior optimized for IGCT devices and current turn-off capability up to 5 kA/µs. Major benefits of freewheeling and clamping diodes for medium voltage PPI inverters, marked as U-Diodes, are soft switching behavior optimized for IGCT or IGBT devices, current turn-off capability up to 5 kA/µs and less snubber effort. Super low loss freewheeling diodes offer in addition up to 25% reduced on state losses.

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