Active and preferred
RoHS Compliant
Lead-free

S29GL128S11DHIV10

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S29GL128S11DHIV10
S29GL128S11DHIV10

Product details

  • Density
    128 MBit
  • Family
    GL-S
  • Initial Access Time
    110 ns
  • Interface Frequency (SDR/DDR) (MHz)
    NA
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Page Access Time
    15 ns
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
  • Speed
    110 ns
OPN
S29GL128S11DHIV10
Product Status active and preferred
Infineon Package
Package Name FBGA-64 (002-15537)
Packing Size 260
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name FBGA-64 (002-15537)
Packing Size 260
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S29GL128S11DHIV10 is a 128 Mb MIRRORBIT™ Eclipse parallel flash memory with a 3.0 V core and versatile I/O supporting 1.65 V to 3.6 V. It features a 16-bit data bus, random access times down to 90 ns, and page access as fast as 15 ns. The device offers a 512-byte programming buffer, automatic ECC for single-bit error correction, and uniform 128 KB sectors. Endurance is rated at 100,000 cycles. Sector protection makes it suitable for automotive systems.

Features

  • 65 nm MIRRORBIT™ Eclipse technology
  • CMOS 3.0 V core with versatile I/O
  • Single supply for read/program/erase
  • Versatile I/O voltage range: 1.65 V to VCC
  • 16-bit data bus
  • Asynchronous 32-byte page read
  • 512-byte programming buffer
  • Internal hardware ECC with single bit
  • Uniform 128 KB sectors
  • Suspend/resume for program and erase
  • Advanced sector protection (ASP)
  • 1024-byte one time program (OTP) array

Benefits

  • High reliability with 65 nm process
  • Flexible I/O supports system integration
  • Easy power supply design
  • Supports wide I/O voltage range
  • Fast data transfers with 16-bit bus
  • Efficient page read for fast access
  • Fast programming with large buffer
  • ECC enhances data integrity
  • Simple sector management
  • Interruptible program/erase for flexibility
  • Robust data and sector protection
  • Secure OTP for permanent data

Applications

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }