Active and preferred

IRHYB67134CM

Data Sheet
package

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IRHYB67134CM
IRHYB67134CM
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    12 A
  • ID (@25°C) max
    19 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA Tabless Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    50 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    90 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    150 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO257-3
Package Name TO-257 TABLESS LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO257-3
Package Name TO-257 TABLESS LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The IRHYB67134CM R6 N-channel MOSFET is a single radiation hardened device with a maximum voltage of 150V and a maximum current of 19A. This COTS device offers electrical performance of up to 100krad(Si) TID. Housed in a TO-257AA tabless low ohmic package, this rad hard MOSFET is ideal for space and radiation-sensitive applications. Its low RDS(on) and low gate charge ensure high efficiency in switching applications.

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }