IRHLNM7S7110

Data Sheet

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IRHLNM7S7110
IRHLNM7S7110
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@100°C) max
    4.1 A
  • ID (@25°C) max
    6.5 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    11 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    290 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.4 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHLNM7S7110 is a radiation-hardened, single R7 N-channel MOSFET with 250V, 6.5A capacity in SMD-0.2 package. Its electrical performance is up to 100krad(Si) TID, making it ideal for space applications. With single event gate rupture and burnout immunity, it's a reliable solution for interfacing CMOS and TTL control circuits with power devices. COTS rated, it's ruggedized for your radiation environment needs.

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