IRF6710S2

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance.
Data Sheet

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IRF6710S2
IRF6710S2
Data Sheet

Product details

  • ID (@ TC=25°C) max
    37 A
  • ID (@ TA=70°C) max
    10 A
  • ID (@ TA=25°C) max
    12 A
  • Micro-stencil
    IRF66S1-25
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    DirectFET S1
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    1.8 W
  • Ptot max
    15 W
  • Qgd
    3 nC
  • QG
    8.8 nC
  • RDS (on) (@4.5V) max
    11.9 mΩ
  • RDS (on) (@10V) max
    5.9 mΩ
  • RDS (on) max
    5.9 mΩ
  • RthJC max
    9.8 K/W
  • Tj max
    175 °C
  • VDS max
    25 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Optimized for Control FET Applications
  • Optimized for High Frequency Switching
  • Low Package Inductance

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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