Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant

IGT60R042D1

END OF LIFE
600 V CoolGaN™ e-mode power transistor for high power applications in bottom side cooled power package
Data Sheet
package
board
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IGT60R042D1
IGT60R042D1
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Data Sheet

Product details

  • Generation
    ≤ G3
  • ID (@ TA=25°C) max
    23 A
  • IDpuls (@25°C) max
    90 A
  • Mounting
    SMT
  • QG
    8.8 nC
  • RDS (on) (typ)
    35 mΩ
  • VDS max
    600 V
OPN
IGT60R042D1ATMA1
Product Status discontinued
Infineon Package
PG-HSOF-8
Package Name N/A
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
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Product Status discontinued
Infineon Package
PG-HSOF-8
Package Name -
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
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The IGT60R042D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 package, it is designed optimal power dissipation required in modern data centers, server , telecom , renewables and numerous other applications.

Features

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Low dynamic RDS(on)
  • Bottom-side cooled

Benefits

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

Documents

Documents

Design resources

Partner solutions

Developer community

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