Active and preferred
RoHS Compliant

IGLD65R080D2

CoolGaN™ Transistor 650 V G5
Data Sheet
package
ea.
in stock

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IGLD65R080D2
IGLD65R080D2
ea.
Data Sheet

Product details

  • Generation
    G5
  • ID (@25°C) max
    18 A
  • IDpuls (@25°C) max
    42 A
  • Mounting
    SMT
  • QG
    3.3 nC
  • Qualification
    Industrial
  • RDS (on) max
    96 mΩ
  • RDS (on) (typ)
    80 mΩ
  • VDS max
    650 V
Recommended
OPN
IGLD65R080D2AUMA1
Product Status active and preferred
Infineon Package
PG-LSON-8
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-LSON-8
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The IGLD65R080D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.

Features

  • 650 V e-mode power transistor
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Low dynamic RDS(on)
  • High ESD robustness: 2 kV HBM - 1 kV CDM
  • Bottom-side cooled package
  • JEDEC qualified (JESD47, JESD22)

Benefits

  • Supports high operating frequency
  • Enables highest system efficiency
  • Enables ultrahigh power density designs
  • Supports BOM cost savings

Documents

Documents

Design resources

Partner solutions

Developer community

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