not for new design
RoHS Compliant
Lead-free

GS-065-030-2-L-TR

CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability
Data Sheet
package
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GS-065-030-2-L-TR
GS-065-030-2-L-TR
Data Sheet

Product details

  • Generation
    ≤ G3
  • ID (@25°C) max
    30 A
  • IDpuls (@25°C) max
    60 A
  • Mounting
    SMT
  • QG
    6.7 nC
  • Qualification
    Industrial
  • RDS (on) (typ)
    50 mΩ
  • RDS (on) max
    68 mΩ
  • VDS max
    650 V
OPN
GS0650302LTRXUMA1
Product Status not for new design
Infineon Package
PG-VSON-8
Package Name PDFN 8x6
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status not for new design
Infineon Package
PG-VSON-8
Package Name PDFN 8x6
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The GS-065-030-2-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency.  The GS-065-030-2-L-TR is a bottom-side cooled transistor in a 8x8 mm PDFN package that enables ideal power disspation as required in high power server and data center power supplies and industrial use power applications.

Features

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Bottom-side cooled
  • Zero reverse recovery loss
  • Source Sense pad for optimal gate drive
  • Fast, controllable fall and rise times
  • RoHS 3(6+4) compliant

Benefits

  • Improves system efficiency
  • Improves power density
  • Reduces system weight
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

Documents

Documents

Design resources

Partner solutions

Developer community

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