Active and preferred
RoHS Compliant
Lead-free

AIMBG120R160M1

CoolSiC™ Automotive MOSFET 1200V G1p in D2PAK-7 package
Data Sheet
package

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AIMBG120R160M1
AIMBG120R160M1
Data Sheet

Product details

  • Ciss
    350 pF
  • Coss
    20 pF
  • ID (@25°C) max
    17 A
  • Launch year
    2023
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO-263-7
  • Planned to be available until at least
    2033
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    106 W
  • QG
    14 nC
  • Qualification
    Automotive
  • RDS (on) (@ Tj = 25°C)
    160 mΩ
  • RthJC max
    1.42 K/W
  • Technology
    CoolSiC™ G1
  • VDS max
    1200 V
  • VGSS, off
    0
  • VGSS, on
    20
Recommended
OPN
AIMBG120R160M1XTMA1
Product Status active and preferred
Infineon Package
PG-TO263-7
Package Name D2PAK 7-pin
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TO263-7
Package Name D2PAK 7-pin
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Features

  • Revolutionary semiconductor material - Silicon Carbide
  • Very low switching losses
  • Threshold-free on state characteristic
  • 0V turn-off gate voltage
  • Benchmark gate threshold voltage, VGS(th)=4.5V
  • Fully controllable dv/dt
  • Commutation robust body diode, ready for synchronous rectification
  • Temperature independent turn-off switching losses
  • Sense pin for optimized switching performance
  • Suitable for HV creepage requirements
  • XT interconnection technology for best-in-class thermal performance

Benefits

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost

Documents

Documents

Design resources

Partner solutions

Developer community

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