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650 V IGBT4: The optimized device for large current modules with 10 μs short-circuit withstand time

This paper presents the new Infineon 650V IGBT4. Designed especially for medium and large current applications Inom>300A, in comparison with the 600V IGBT3 the device offers a better softness during switch-off, and a higher blocking voltage capability. The measures used to realize these features were to increase the chip thickness, to reduce the MOS channel width, and to enhance the back-side emitter efficiency. As a consequence, also the short-circuit robustness is significantly improved. With the 600V IGBT3, including trench and fieldstop technology, Infineon introduced an IGBT device in 2003, which still offers benchmarking characteristics. However, the 600V IGBT3 has been optimized for smaller power applications, or higher power in very low stray inductance applications. The stray inductance in combination with the current gradient has an influence on the voltage characteristic during turn on and turn off, as V=L·dI/dt. Thus the over voltage increases when switching off with larger Lσ. In order to provide additional degrees of freedom in larger current applications in various setups, now a new chip, the 650V IGBT4, has been designed.

• 191.27 KB
• Jan 31, 2011