Active and preferred

EVAL_HB_PARALLELGAN

Evaluate paralleling of CoolGaN™ 600 V HEMTs in half-bridge configurations for higher power applications.

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EVAL_HB_PARALLELGAN
EVAL_HB_PARALLELGAN

Product details

  • Board Type
    Evaluation Board
  • Dimensions
    78mm×60mm×28mm
  • Family
    CoolGaN™
  • Input Type
    DC, AC
  • Output Current max
    24 A
  • Output Voltage max
    450 V
  • Product Name
    EVAL_HB_ParallelGaN
  • Qualification
    Standard
  • Supply Voltage max
    450 V
  • Target Application
    Charger, EV Charger, Drives, Energy Storage, Industrial Drives, Motor Control & Drives, Power
  • Topology
    Boost, BCM, Buck, Phase Shift Full Bridge, PFC Interleave, PFC, LLC, Half Bridge, Full Bridge, Chopper
OPN
EVALHBPARALLELGANTOBO1
Product Status active and preferred
Infineon Package N/A
Package Name N/A
Packing Size 1
Packing Type CONTAINER
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package N/A
Package Name -
Packing Size 1
Packing Type CONTAINER
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The EVAL_HB_ParallelGaN is a test platform for investigating parallel operation of Infineon CoolGaN™ for higher power levels. It allows dynamic and static current sharing examination up to MHz levels and serves as a reference for PCB layout practices. The board is available as a Hardware Board or Reference Design and includes features such as isolated control and gate common-mode inductors.

Features

  • Evaluate GaN paralleling benefits and issues in half-bridge environment
  • Configurable for buck, boost or pulsed operation for hard- or soft-switching
  • Static and dynamic current sharing can be monitored through separate shunt resistors
  • Adjustable dead time

Benefits

  • Doubling the current carrying capacity by effectively halving the RDS(on)
  • Single driver can drive two parallel GaN devices

Applications

Documents

Design resources