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Robustness of level shifter gate driver ICs concerning negative voltages

In power electronic field, the level shifter gate driver IC suffers heavily from the negative voltage especially at the high side reference pin, which is normally connected with the load. Three half bridge level shifter gate driver ICs are tested under static and transient negative voltage condition. This paper will show the test method and point out the performance of each gate driver IC under the negative voltage condition. Integrated circuits based on standard silicon technology exhibit low tolerance to negative voltages presented to their inputs and outputs. A small negative voltage (-1V to -2V) at one of the IC pins may already result in uncontrolled substrate currents (e.g. due to forward biased PN junction from substrate to active area) which may trigger an unwanted IC behavior. This erratic behavior may lead to further issues in the circuit where the IC is being used. In case of gate driver ICs, negative voltages may be very problematic in particular. Gate driver ICs are used to control power transistors which operate at high voltages and currents. The switching nature of such circuits combined with circuit parasitics may lead to oscillations and voltage swings which often expose IC pins to a negative voltage.

• 558.10 KB
• Nov 04, 2015