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System Benefits for Solar Inverters using SiC Semiconductor Modules

Many publications are in circulation highlighting the awesome properties of novel high power silicon carbide (SiC) devices and their technical advantages in different applications. Due to reduced switching losses and therefore increased switching frequency, generally the size of peripheral passive components can be minimized and / or conversion power efficiency can be improved, respectively. The use of novel silicon carbide devices like SiC JFETs in PV solar inverter systems is often proposed to improve power density and power efficiency which are still unique selling points for PV solar plants. Due to the technical production challenges and therefore relative high expenses of SiC devices, there is still the question, if the reduced share of expenses of passive components and housings legitimates the use of SiC devices in cost-sensitive PV solar inverter market. In this paper, the cost-improving issues of a grid-connected PV solar inverter system will be highlighted and alternative, redesign solutions with SiC devices will be presented and explained. After that, the cost potentials of proposed redesign will be evaluated to indicate the system cost benefit in PV solar inverters using SiC devices.

• 676.28 KB
• Jul 17, 2014