2ED020I12-F2

Overview

1200 V dual high-side gate driver IC with galvanic isolation, DESAT and short circuit clamping

EiceDRIVER™ Enhanced - Galvanic isolated dual channel IGBT driver IC with CT technology for 600V/1200V IGBTs

Summary of Features

  • 1200V Coreless Transformer isolated Driver Ics
  • 2 A rail-to-rail outputs
  • Protection function
  • V(cesat)-detection
  • Active Miller Clamp

Benefits

  • Space saving package
  • Improved energy efficiency

Potential Applications

 

Diagrams
Videos

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.

Galvanic isolated Gate Drivers with Protection Features

EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.

EiceDRIVER™ 2EDL Driver IC Family

EiceDRIVER™ 2EDL is a 600V half bridge gate driver IC family basing on level-shifter SOI (Silicon on Insulator) technology, which integrates low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications. 

Training
  • The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
  • Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc

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  • The EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
  • Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

Watch now

You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.

For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.

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With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

  • EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
  • The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

Watch now

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