GaN transistors (GaN HEMTs)

Infineon’s GaN semiconductors are highly efficient for power conversion in the voltage range of up to 600 V. The CoolGaN™ 600 V GIT HEMT family uses an enhancement-mode concept based on the hybrid-drain-embedded gate-injection structure that provides the highest level of robustness. CoolGaN™ sets the quality standards and offers the most reliable and performing solution among all GaN HEMTs on the market.

CoolGaN™ high electron mobility transistors (HEMTs) can operate at high switching frequencies without compromising efficiency. Many enhancement-mode GaN HEMTs utilize a Schottky-type gate to emulate a typical insulated MOSFET gate.

The benefits of Schottky gate (SG) HEMTs are numerous: faster switching transitions and lower switching losses, as well as higher switching frequencies enabling smaller magnetics and capacitors, shorter dead times, and smaller heatsinks.

The CoolGaN™ Integrated Power Stage (IPS) family is available in various configurations, including single-channel and half-bridge. While the half-bridge configuration combines two 600 V GaN power transistors with dedicated EiceDRIVER™ gate drivers in TIQFN-28 and TFLGA-27 packages, the single-channel setup utilizes only one 600 V GaN power transistor merged with tailor-made GaN drivers in the TIQFN-21 package.     

Both result in a smaller physical footprint, increased power density, and energy efficiency – which benefits designers in faster and simpler implementation.

Infineon offers a broad portfolio of single- and dual-channel GaN drivers both isolated and non-isolated. When combined with Infineon's CoolGaN™ transistors, the use of EiceDRIVER™ gate driver ICs offers numerous advantages such as maximum efficiency and power density along with excellent performance in power conversion applications. Additionally, they provide high reliability to ensure robustness even under challenging conditions.

Gallium nitride target applications include USB-C adapters and chargers, TV power supplies, server and telecom SMPS, solar and energy storage systems, motor drives, robots and drones, and more.

When we are designing a switching mode power supply, PCB layout is always an important topic. Solving interference problems by slowing down the switching speed of power devices is no longer a solution. Join us to see how to optimize PCB layouts.

This talk will focus on two board design platforms that demonstrate the scalability of GaN power solutions in different applications. For server DC-DC converters, you will see 4- and 6-phase IBC buck converters with 1.6 kW and 2.4 kW output power respectively, each achieving ~97% peak efficiency. For LV FOC motor drives, you will see a “matchbox-sized” drive with 1 kW output power using 2 paralleled HEMTs for drones, servos, and e-bikes; and a motor drive with 8 kW output power using 8 paralleled HEMTs for e-scooters and power tools. The recommendations for scaling the two different designs are based on a holistic system approach, targeting the highest efficiency and power density to meet customer needs.

• Get to know the features of CoolGaN™ half-bridge IPS and the benefits it brings for charger/adapter applications
• Identify the topologies in which a CoolGaN™ half-bridge IPS can be used to build a charger/adapter
• Be acquainted with a use case for CoolGaN™ half-bridge IPS

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This training provides an insight about the system benefits of wide-bandgap devices, which will conquer market share in areas where power density, efficiency and/or battery range are decisive. The training focuses on two applications, mobile chargers and on-board chargers, and will talk about the challenges faced by the solutions today and how SiC and GaN provide next levels of performance.

Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.

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By watching this eLearning you will:

• Understand package inductance
• Know why wide bandgap transistors are more susceptible to package inductance, and
• Identify which Infineon package types have lower inductance

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Click here to watch eLearning in Chinese

In this eLearning you will get an overview of the main features and benefits of Infineon’s 600 V CoolGaN™ transistors.

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In this eLearning you will learn about the similarities and differences of GaN power transistors compared to their silicon counterparts.

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In this training, you will learn about the transient voltage ratings that were added to CoolGaN™ datasheets.

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In this training, we will show you Infineon’s CoolGaN™ - GaN HEMTs methodology.

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CoolGaN™ - Gallium Nitride Transistors are the power devices with the best performance available on the market. Get to know more about this technology.

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Do you want to learn about switched mode power supplies (SMPS), but have little to no background in electrical engineering? Then watch this training series!

It will take you on a journey: You will start with the basics of electrical engineering and learn the principles of semiconductors so you are fully prepared to dive into the world of SMPS.

Part 1 - Electrical engineering fundamentals (Chinese version)
Part 2 - Principles of semiconductors (Chinese version)
Part 3 - Introduction to SMPS (Chinese version)
Part 4 - SMPS topologies (Chinese version)