Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
END OF LIFE
discontinued
RoHS Compliant
Lead-free

BFP740FESD

END OF LIFE

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BFP740FESD
BFP740FESD

Product details

  • fT
    47 GHz
  • Gmax
    29.50 dB @900 MHz
  • IC max
    45 mA
  • NFmin
    0.55 dB @900 MHz
  • OIP3 (@900 MHz)
    24 dBm
  • OP1dB (@900 MHz)
    10 dBm
  • Package
    TSFP-4
  • Ptot
    160 mW
  • VCEO max
    4.2 V
OPN
BFP740FESDH6327XTSA1
Product Status discontinued
Infineon Package
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) with an integrated ESD protection

Features

  • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,  2 kV ESD robustness (HBM) due to integrated protection circuits
  • NFmin = 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3V, 6 mA
  • High gain Gms = 26 dB at 2.4 GHz and Gma = 20.5 dB at 5.5 GHz, 3V, 25 mA
  • OIP3 = 23.5 dBm at 5.5 GHz, 25 mA
  • Low profile and small form factor leadless package

Applications

Documents

Design resources

Developer community

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