USB-C adapters and chargers

Discover our USB-C adapter and charger circuit solutions that support the USB Power Delivery standard with increased power levels

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Overview

From high power density to cost/performance ratio, our solutions meet all of your requirements. Avoid complexity and incompatibility, and shorten time to market with Infineon’s broad portfolio of high-quality USB-C PD solutions for multi-port USB hub ICs, USB-C charging modules, 65 W USB and more. Break through the barriers present in fast charging designs at a competitive cost. Make the switch today.

Benefits

  • High efficiency and power density
  • High power including EPR
  • PD controller to enable multiport
  • System solution means BOM cost down
  • GaN charger technology
  • System level support

Block diagram

About

USB-C power delivery (USB-PD) has emerged as the standard for unified and fast charging and for supplying power up to 100 W for all types of mobile devices such as smartphones, tablets, laptops, smart speakers, TVs, and others. The latest USB-PD Rev3.1 standard increases the maximum charging power up to a staggering 240 W. 

Infineon's extensive portfolio of products for complete USB-C PD systems includes solutions for primary switches, SR and load switches, primary side PWM control, SR and protocol control, and ESD protection.

USB-C simplifies the end-user experience and combined with the introduction of GaN devices and increasing switching frequencies, it enables more compact and lightweight chargers and adapters. As more and more original equipment manufacturers (OEMs) no longer sell the chargers/adapters together with the devices, the end-user demand for aftermarket supply has increased.

This change has triggered the development of multi-port chargers like 1A1C or 2C designs, 1A1C standing for a charger with one Type-C connector and one Type-A connector. Infineon's EZ-PD™ CCG7DC is a two-port USB-hub IC specifically designed for dual-port hubs, featuring two buck-boost converters and full programmability for implementation of load sharing. Infineon’s dual-port charger reference design application notes include detailed two-port USB hub circuit diagrams. Moreover, making use of the highest USB-PD power rating requires specific USB E-Mark cables that support a maximum current of 5 A, in contrast to standard cables limited to 3 A.

Infineon offers a variety of charger reference designs and related USB charging schematics based on quasi-resonant (QR), ZVS, and hybrid flyback operation for different power levels and power density requirements. Our innovative single- and dual-port USB-C controllers are fully programmable and can be easily customized for specific requirements.

The USB Type-C charger schematic designs and USB charger adapter circuit diagrams feature Infineon’s comprehensive portfolio of silicon and GaN based high- and low-voltage power switches, USB-PD power and protocol controllers, USB-C cable marker controllers, as well as ESD protection devices.

Our reference designs allow for the quick and easy development of prototypes, meaning manufacturers can benefit from new, fast charging adapter technology while reducing development costs and time to market. Thanks to decades of experience in the electronics industry, Infineon drives the trend of adapter miniaturization without compromising on product efficiency and performance.

USB power delivery (USD-PD) is a universal standard to charge or supply any device with a USB-C port, including those with higher power ratings, such as hard drives, printers, laptops, and smartphones with a large battery capacity. USB-PD chargers and adapters can be used to power such a wide variety of devices as they supply the requested amount of power needed. The power source and sink communicate through the USB-PD protocol and the sink defines how much power is required. The charging voltage and current are adjusted accordingly by the power source, the USB-PD charger, or power adapter.

Infineon's innovative CoolGaN™ technology sets a new standard for power transistors. CoolGaN™ products feature gallium nitride (GaN) transistors instead of silicon. Their higher critical electrical fields enable outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high switching speed applications. GaN transistors can be operated with reduced dead-times which results in higher efficiency and better thermals. Operation at high switching frequencies allows the volume of passive components to shrink which improves overall power density. Overall, GaN enables smaller and lighter chargers and adapters, while still delivering the same or better performance and charging speed.

USB-C power delivery (USB-PD) has emerged as the standard for unified and fast charging and for supplying power up to 100 W for all types of mobile devices such as smartphones, tablets, laptops, smart speakers, TVs, and others. The latest USB-PD Rev3.1 standard increases the maximum charging power up to a staggering 240 W. 

Infineon's extensive portfolio of products for complete USB-C PD systems includes solutions for primary switches, SR and load switches, primary side PWM control, SR and protocol control, and ESD protection.

USB-C simplifies the end-user experience and combined with the introduction of GaN devices and increasing switching frequencies, it enables more compact and lightweight chargers and adapters. As more and more original equipment manufacturers (OEMs) no longer sell the chargers/adapters together with the devices, the end-user demand for aftermarket supply has increased.

This change has triggered the development of multi-port chargers like 1A1C or 2C designs, 1A1C standing for a charger with one Type-C connector and one Type-A connector. Infineon's EZ-PD™ CCG7DC is a two-port USB-hub IC specifically designed for dual-port hubs, featuring two buck-boost converters and full programmability for implementation of load sharing. Infineon’s dual-port charger reference design application notes include detailed two-port USB hub circuit diagrams. Moreover, making use of the highest USB-PD power rating requires specific USB E-Mark cables that support a maximum current of 5 A, in contrast to standard cables limited to 3 A.

Infineon offers a variety of charger reference designs and related USB charging schematics based on quasi-resonant (QR), ZVS, and hybrid flyback operation for different power levels and power density requirements. Our innovative single- and dual-port USB-C controllers are fully programmable and can be easily customized for specific requirements.

The USB Type-C charger schematic designs and USB charger adapter circuit diagrams feature Infineon’s comprehensive portfolio of silicon and GaN based high- and low-voltage power switches, USB-PD power and protocol controllers, USB-C cable marker controllers, as well as ESD protection devices.

Our reference designs allow for the quick and easy development of prototypes, meaning manufacturers can benefit from new, fast charging adapter technology while reducing development costs and time to market. Thanks to decades of experience in the electronics industry, Infineon drives the trend of adapter miniaturization without compromising on product efficiency and performance.

USB power delivery (USD-PD) is a universal standard to charge or supply any device with a USB-C port, including those with higher power ratings, such as hard drives, printers, laptops, and smartphones with a large battery capacity. USB-PD chargers and adapters can be used to power such a wide variety of devices as they supply the requested amount of power needed. The power source and sink communicate through the USB-PD protocol and the sink defines how much power is required. The charging voltage and current are adjusted accordingly by the power source, the USB-PD charger, or power adapter.

Infineon's innovative CoolGaN™ technology sets a new standard for power transistors. CoolGaN™ products feature gallium nitride (GaN) transistors instead of silicon. Their higher critical electrical fields enable outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high switching speed applications. GaN transistors can be operated with reduced dead-times which results in higher efficiency and better thermals. Operation at high switching frequencies allows the volume of passive components to shrink which improves overall power density. Overall, GaN enables smaller and lighter chargers and adapters, while still delivering the same or better performance and charging speed.

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }