not for new design

GS65011-EVBEZ

Open-loop boost converter evaluation board designed to evaluate GaN EZDrive solution with a GaN power transistor

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GS65011-EVBEZ
GS65011-EVBEZ

Product details

  • Input Type
    DC
  • Input Voltage
    0 V to 200 V
  • Power max
    200 W
OPN
Product Status not for new design
Infineon Package --
Package Name N/A
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status not for new design
Infineon Package --
Package Name -
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The GS65011-EVBEZ is a GaN-based open-loop DC/DC boost converter. It is assembled with the EZDrive GaN driving circuit, a Si MOSFET PWM controller and the CoolGaN™ power transistor GS-065-011-1-L in 5×6 PDFN package. The PWM control signal is generated internally by the PWM controller, U2. The EZDrive uses a Si MOSFET controller to drive the GaN power transistor It is composed of two Zener diodes, one capacitor, three resistors and one diode.

Features

  • Si MOSFET converter for GaN E-HEMTs
  • Eliminates redundant GaN drivers & LDOs
  • Controllable turn ON / OFF slew rate

Benefits

  • Low cost
  • Low component count
  • Smaller board area

Applications

Documents

Design resources