600 V and 650 V CoolMOS™ C7

Designed to achieve record-level efficiency performance

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Overview

Infineon's 600 V and 650 V CoolMOS™ C7 superjunction (SJ) MOSFET families are designed to achieve record-level efficiency performance, offering substantial efficiency benefits over the whole load range in hard-switching applications compared to previous CoolMOS™ series and competitors.

Key Features

  • Small switching loss - low QG, Coss
  • 50% Eoss reduction vs CoolMOS™ CP
  • Hard switching for (600 V & 650 V)
  • High-end resonant (600V) topologies

Products

About

CoolMOS™ 600 V & 650 V C7 SJ MOSFET for industry-leading efficiency

650 V CoolMOS™ C7 – market leading best-in-class, on-resistance per package: the 650 V CoolMOS™ C7 series brings a new level of performance in hard switching applications such as power factor correction (PFC) when an additional 50 V of breakdown voltage is needed versus 600 V CoolMOS™ C7. It provides efficiency benefits across the whole load range by balancing a number of key parameters.

Our flagship portfolio of CoolMOS™ C7 solutions

600 V CoolMOS™ C7 – our flagship CoolMOS™ technology for hard and high-end soft switching topologies: the 600 V CoolMOS™ C7 series offers approximately 50 percent reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP. It offers an outstanding level of performance in PFC, TTF, and other hard switching as well as in high-end LLC topologies and extends the use of silicon MOSFETs to the next generation of highest efficiency power designs.

Highest efficiency MOSFET for hard and soft switching (PFC and LLC)

BOM (bill of material) cost-driven applications can use the efficiency gained at full load by the combination of C7 and TO-247 4pin package. This is done by increasing the RDS(on) of the MOSFET so that it matches the previous 3pin package full load efficiency enabling benefits in costs (i.e., 40 mΩ versus 70 mΩ device). Doubling the switching frequency can also save magnetic component material. Cost savings of up to 30 percent in copper windings and 45 percent in core (dependent on the material used) can be achieved. 

CoolMOS™ 600 V & 650 V C7 SJ MOSFET for industry-leading efficiency

650 V CoolMOS™ C7 – market leading best-in-class, on-resistance per package: the 650 V CoolMOS™ C7 series brings a new level of performance in hard switching applications such as power factor correction (PFC) when an additional 50 V of breakdown voltage is needed versus 600 V CoolMOS™ C7. It provides efficiency benefits across the whole load range by balancing a number of key parameters.

Our flagship portfolio of CoolMOS™ C7 solutions

600 V CoolMOS™ C7 – our flagship CoolMOS™ technology for hard and high-end soft switching topologies: the 600 V CoolMOS™ C7 series offers approximately 50 percent reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP. It offers an outstanding level of performance in PFC, TTF, and other hard switching as well as in high-end LLC topologies and extends the use of silicon MOSFETs to the next generation of highest efficiency power designs.

Highest efficiency MOSFET for hard and soft switching (PFC and LLC)

BOM (bill of material) cost-driven applications can use the efficiency gained at full load by the combination of C7 and TO-247 4pin package. This is done by increasing the RDS(on) of the MOSFET so that it matches the previous 3pin package full load efficiency enabling benefits in costs (i.e., 40 mΩ versus 70 mΩ device). Doubling the switching frequency can also save magnetic component material. Cost savings of up to 30 percent in copper windings and 45 percent in core (dependent on the material used) can be achieved. 

Documents

Documents

Design resources

Developer community

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