SPB80N06S-08

55V, N-Ch, 8 mΩ max, Automotive MOSFET, D2PAK, SIPMOS™
Data Sheet

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SPB80N06S-08
SPB80N06S-08
Data Sheet

Product details

  • Budgetary Price €/1k
    1.94
  • ID (@25°C) max
    80 A
  • IDpuls max
    320 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    D2PAK (PG-TO263-3)
  • Polarity
    N
  • Ptot max
    300 W
  • QG (typ @10V) max
    19 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    8 mΩ
  • RthJC max
    0.5 K/W
  • Technology
    SIPMOS™
  • VDS max
    55 V
  • VGS(th) min
    2.1 V
  • VGS(th) max
    4 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Features

  • N-channel - Normal Level -Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Avalanche test
  • Repetive Avalanche up to Tjmax = 175 ° VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 W
  • dv /dt rated

Benefits

  • world's lowest RDS at 55V (on)  in planar technology
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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