IRHNJ57234SESCS

Data Sheet

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IRHNJ57234SESCS
IRHNJ57234SESCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 1C
  • Generation
    R5
  • ID (@100°C) max
    6.4 A
  • ID (@25°C) max
    10 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100
  • Package
    SMD-0.5
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    32 nC
  • QPL Part Number
    2N7555U3
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    400 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS min
    250 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNJ57234SESCS R5 N-channel MOSFET is a rad hard device for space applications, with a peak voltage of 250V and a current capacity of 10A. The device has a QIRL classification and electrical performance up to 100krad(Si) TID. The SMD-0.5 package with lead form up, combined with low RDS(on) and low gate charge, reduces power losses in switching applications while maintaining all the advantages of MOSFETs.

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