IRHNA6S7160

Data Sheet

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IRHNA6S7160
IRHNA6S7160
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    56 A
  • ID (@25°C) max
    56 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-2
  • Polarity
    N
  • QG
    170 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    10 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
A single rad hard N-channel MOSFET in a SMD-2 package, the IRHNA6S7160 has a voltage rating of 100V and a current rating of 56A. With electrical performance up to 100krad (Si) TID, this R6 device delivers has low RDS(on) and low gate charge for reduced power losses in switching applications. LET rated at 90 MeV·cm2/mg.

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