IRHF6S7230SCS

Data Sheet

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IRHF6S7230SCS
IRHF6S7230SCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    5.7 A
  • ID (@25°C) max
    9.1 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-205AF
  • Polarity
    N
  • QG
    45 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    145 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHF6S7230SCS R6 N-channel MOSFET is a radiation-hardened device designed for space applications. With a maximum voltage rating of 200V and a current rating of 9.1A, it features low RDS(on) and low gate charge for reduced power losses in switching applications. Its electrical performance is up to 100krad(Si) TID, QIRL classified, making it a reliable choice for demanding space environments.

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }