IRF8513

30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Data Sheet

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IRF8513
IRF8513
Data Sheet

Product details

  • ID (@ TA=25°C) max
    11 A, 11 A
  • ID (@ TA=70°C) max
    9 A, 9 A
  • Moisture Sensitivity Level
    1
  • Package
    SO-8
  • Polarity
    N+N, N+N
  • Ptot (@ TA=25°C) max
    2.4 W
  • Ptot max
    2.4 W
  • Qgd (typ)
    3.1 nC, 3.1 nC
  • QG
    7.6 nC
  • RDS (on) (@4.5V) max
    16.9 mΩ, 16.9 mΩ
  • RDS (on) (@10V) max
    12.7 mΩ, 12.7 mΩ
  • RDS (on) max
    12.7 mΩ, 12.7 mΩ
  • RthJA max
    62.5 K/W
  • Tj max
    175 °C
  • VDS max
    30 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Low RDS(on)
  • Low RDS(ON) at 4.5V VGS
  • Very Low Gate Charge
  • Dual N-Channel MOSFET

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