not for new design
RoHS Compliant

IPN80R1K2P7

A new benchmark in efficiency and thermal performance
Data Sheet
package
ea.
in stock

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IPN80R1K2P7
IPN80R1K2P7
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.33
  • Ciss
    300 pF
  • Coss
    6 pF
  • ID max
    4.5 A
  • ID (@25°C) max
    4.5 A
  • IDpuls max
    11 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    SOT-223-3
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    6.8 W
  • Qgd
    4.5 nC
  • QG
    11 nC
  • QG (typ @10V)
    11 nC
  • RDS (on) (@10V) max
    1200 mΩ
  • RDS (on) max
    1200 mΩ
  • RthJA max
    160 K/W
  • Special Features
    price/performance
  • VDS max
    800 V
  • VGS(th)
    3 V
OPN
IPN80R1K2P7ATMA1
Product Status not for new design
Infineon Package
PG-SOT223-3
Package Name SOT-223-3
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-SOT223-3
Package Name SOT-223-3
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
With the 800 V CoolMOS™ P7 series, Infineon sets a benchmark in 800 V superjunction technologies and combines best-in-class performance with state-of-the-art ease of use. Robust gate module, body diode, and fast and clean switching are the features that make the product family a perfect fit for flyback-based consumer SMPS applications. It is also suitable for consumer PFC stages, solar, adapter, audio, lighting applications.

Features

  • Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
  • Best-in-class DPAK R DS(on) of 280mΩ
  • Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
  • Integrated Zener diode ESD protection up to Class 2 (HBM)
  • Best-in-class quality and reliability
  • Fully optimized portfolio

Benefits

  • 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
  • Enabling higher power density designs, BOM savings and lower assembly cost
  • Easy to drive and to design-in
  • Better production yield by reducing ESD related failures
  • Less production issues and reduced field returns
  • Easy to select right parts for fine tuning of designs

Documents

Documents

Design resources

Partner solutions

Developer community

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