OptiMOS™ Fast Diode 200V/220/250V/300V
Optimized for hard switching topologies
OptiMOS™ Fast Diode (FD), Infineon’s latest generation of power MOSFETs in 200 V, 220, 250 V and 300 V is optimized for body diode hard commutation. The improved hard commutation ruggedness of the device allows it to be used under demanding conditions like higher dv/dt, dI/dt and current densities simplifying the design process.
This advantage makes OptiMOS™ FD the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. OptiMOS™ FD family provides a reverse recovery charge (Qrr) optimized solution for customers striving for the highest standards of performance. OptiMOS™ FD 200 V, 220, 250 V and 300 V achieves a 40 percent Qrr reduction compared to OptiMOS™ 3.
Low Qrr improves the system reliability by providing a significant reduction of voltage overshoot which minimizes the need for a snubber circuit, resulting in less engineering cost and effort. OptiMOS™ FD in SuperSO8 furthermore offers an enhanced temperature capability of 175°C to support higher power density designs and improved robustness.