IRHYS67134CMSCS

Data Sheet

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IRHYS67134CMSCS
IRHYS67134CMSCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    12 A
  • ID (@25°C) max
    19 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    50 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    90 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    150 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IRHYS67134CMSCS R6 N-channel MOSFET is a rad hard device with a TO-257AA tabless low ohmic package. It has a maximum voltage of 150V and a maximum current rating of 19A. This MOSFET has been characterized for both Total Dose and Single Event Effect, making it suitable for space applications. With low RDS(on) and low gate charge, it reduces power losses in switching applications.

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