IRHF6S7230

Data Sheet

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IRHF6S7230
IRHF6S7230
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    5.7 A
  • ID (@25°C) max
    9.1 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-205AF
  • Polarity
    N
  • QG
    45 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    145 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHF6S7230 R6 N-channel MOSFET is a radiation-hardened device with a 200V and 9.1A rating, suitable for space applications. With a TO-205AF package and COTS classification, it offers electrical performance up to 100krad(Si) TID, making it ideal for DC-DC converters and motor controllers. The low RDS(on) and gate charge enable low power losses. LET of 90 MeV·cm2/mg allows for useful performance in harsh environments.

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