IPAN70R450P7S

Infineon's answer for flyback topologies
Data Sheet

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IPAN70R450P7S
IPAN70R450P7S
Data Sheet

Product details

  • Budgetary Price €/1k
    0.37
  • Ciss
    424 pF
  • Coss
    8 pF
  • ID (@25°C) max
    10 A
  • ID max
    10 A
  • IDpuls max
    25.9 A
  • Mounting
    THT
  • Operating Temperature
    -40 °C to 150 °C
  • Package
    TO220 FullPAK narrow leads
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    22.7 W
  • Qgd
    5 nC
  • QG
    13.1 nC
  • QG (typ @10V)
    13.1 nC
  • RDS (on) max
    450 mΩ
  • RDS (on) (@10V) max
    450 mΩ
  • RthJA max
    80 K/W
  • RthJC max
    5.5 K/W
  • Rth
    5.5 K/W
  • Special Features
    price/performance
  • VDS max
    700 V
  • VGS(th)
    3 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:
  • Efficiency and thermals
  • Ease-of-use
  • EMI behavior

Features

  • Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
  • Highly performant technology
  • Low switching losses (E oss)
  • Highly efficient
  • Excellent thermal behavior
  • Allowing high speed switching
  • Integrated protection Zener diode
  • Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
  • Finely graduated portfolio

Benefits

  • Cost competitive technology
  • Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
  • Further efficiency gain at higher switching speed
  • Supporting less magnetic size with lower BOM costs
  • High ESD ruggedness up to HBM Class 2 level
  • Easy to drive and design-in
  • Enabler for smaller form factors and high power density designs
  • Excellent choice in selecting the best fitting product

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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