Active and preferred
RoHS Compliant
Lead-free

IMBG120R040M2H

CoolSiC™ MOSFET 1200 V G2 in TO-263-7 package
Data Sheet
package
ea.
in stock

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IMBG120R040M2H
IMBG120R040M2H
ea.
Data Sheet

Product details

  • Ciss
    1310 pF
  • Coss
    55 pF
  • ID (@ TC=25°C)
    52 A
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO-263-7
  • Pin Count
    7 Pins
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    250 W
  • Qgd
    10.4 nC
  • QG
    39 nC
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    39.6 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.6 K/W
  • Technology
    CoolSiC™ G2
  • Tj max
    200 °C
  • VDS max
    1200 V
Recommended
OPN
IMBG120R040M2HXTMA1
Product Status active and preferred
Infineon Package
PG-TO263-7
Package Name D2PAK 7-pin
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-7
Package Name D2PAK 7-pin
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolSiC™ MOSFET 1200 V, 40 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Features

  • RDS(on) = 39.6 mΩ at VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
  • Robust body diode for hard commutation
  • .XT interconnection technology for best-in-class thermal performance

Benefits

  • Better energy efficiency
  • Cooling optimization
  • Higher power density
  • New robustness features
  • Highly reliable

Documents

Documents

Design resources

Partner solutions

Developer community

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