Overview

600 V/1200 V high-speed IGBTs discretes breaking the switching-speed-limits in various topologies.

Key features
  • Low switching losses
  • High efficiency
  • Short-circuit capability
  • Offering Tj (max) of 175°C
Applications
Online UPS
Photovoltaic

Products

About

Introduction to HighSpeed3 H3 IGBTs

The very short tail-current and low turn off losses (25% less than the closest competitor) are the key features of this family, and up to 15% efficiency can be attained by implementing this family in your design. Not only does the family offer very low switching losses, but the conduction losses are also very low. This is thanks to the world-famous TRENCHSTOP™ technology which has an intrinsically very low Vce(sat) behavior. Meanwhile, the freewheeling diode in the duo packs is optimized for fast recovery whilst maintaining a high level of softness. This provides excellent complimentary high-speed switching performance, ruggedness, and EMI behavior. Paired with the HighSpeed3 H3 IGBT you have the best device on the market.

Our HighSpeed3 H3 IGBTs are optimized for high-frequency applications that provide benchmark performance in terms of switching losses and efficiency.

Key Benefits

The key benefits are, among other things, excellent cost/performance, low switching and conduction losses, very good EMI behavior, a small gate resistor for reduced delay time and voltage overshoot, smaller die sizes that lead to smaller packages, best-in-class IGBT efficiency, and EMI behavior.

Key features

The 600 V/1200 V HighSpeed3 H3 IGBTs incorporates important key features, such as, low switching losses for high efficiency, fast switching behavior with low EMI emissions, excellent Vce (sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology, optimized diode for target applications, meaning further improvement in switching losses, short-circuit capability, low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior, it is designed specifically to replace planar MOSFETs in applications switching at frequencies below 70 kHz, it is packaged with and without freewheeling diode for increased design freedom and it is offering Tj (max) of 175°C.

1200 V discrete IGBT - TRENCHSTOP™ IGBT6

The HighSpeed3 IGBT technology is a mature IGBT technology that has been released to the market several years ago. To meet customer requirements of the best efficiency and lowest power loses, Infineon has developed a new generation of 1200 V discrete IGBT - TRENCHSTOP™ IGBT6. The 1200 V TRENCHSTOP™ IGBT 6 was developed as easy plug & play replacement for predecessor 1200 V HighSpeed3 IGBT series.

Learn more

Introduction to HighSpeed3 H3 IGBTs

The very short tail-current and low turn off losses (25% less than the closest competitor) are the key features of this family, and up to 15% efficiency can be attained by implementing this family in your design. Not only does the family offer very low switching losses, but the conduction losses are also very low. This is thanks to the world-famous TRENCHSTOP™ technology which has an intrinsically very low Vce(sat) behavior. Meanwhile, the freewheeling diode in the duo packs is optimized for fast recovery whilst maintaining a high level of softness. This provides excellent complimentary high-speed switching performance, ruggedness, and EMI behavior. Paired with the HighSpeed3 H3 IGBT you have the best device on the market.

Our HighSpeed3 H3 IGBTs are optimized for high-frequency applications that provide benchmark performance in terms of switching losses and efficiency.

Key Benefits

The key benefits are, among other things, excellent cost/performance, low switching and conduction losses, very good EMI behavior, a small gate resistor for reduced delay time and voltage overshoot, smaller die sizes that lead to smaller packages, best-in-class IGBT efficiency, and EMI behavior.

Key features

The 600 V/1200 V HighSpeed3 H3 IGBTs incorporates important key features, such as, low switching losses for high efficiency, fast switching behavior with low EMI emissions, excellent Vce (sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology, optimized diode for target applications, meaning further improvement in switching losses, short-circuit capability, low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior, it is designed specifically to replace planar MOSFETs in applications switching at frequencies below 70 kHz, it is packaged with and without freewheeling diode for increased design freedom and it is offering Tj (max) of 175°C.

1200 V discrete IGBT - TRENCHSTOP™ IGBT6

The HighSpeed3 IGBT technology is a mature IGBT technology that has been released to the market several years ago. To meet customer requirements of the best efficiency and lowest power loses, Infineon has developed a new generation of 1200 V discrete IGBT - TRENCHSTOP™ IGBT6. The 1200 V TRENCHSTOP™ IGBT 6 was developed as easy plug & play replacement for predecessor 1200 V HighSpeed3 IGBT series.

Learn more

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