Overview

We offer three phase gate drivers, six channels in a package with three independent half bridges. We also provide three phase gate driver ICs with advanced Infineon silicon on insulator (SOI) technologies. With excellent ruggedness and noise immunity, these gate drivers are perfect for motor drives, home appliance, and battery powered applications. Automotive qualified three phase gate driver ICs are also available.

Key features
  • Excellent ruggedness
  • Noise immunity
  • Silicon-on-insulator technology
  • Unparalleled reliability

Products

About

Introduction to three phase drivers

Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs, and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualified gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and non-isolated low-side drivers.

Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate driver configuration is essential for all power switches, whether they are in discrete form or in a power module.

Details about the three phase drivers

Our cutting-edge three-phase gate driver IC solutions are the ultimate choice for driving power devices like MOSFETs and IGBTs. At the heart of our gate driver ICs lies the innovative silicon-on-insulator (SOI) technology, meticulously crafted to provide exceptional ruggedness and noise immunity. Our gate drivers perform optimally even in the most challenging environments, delivering unparalleled reliability and efficiency.

Additional information about three phase drivers

We offer a comprehensive portfolio of gate driver ICs. Our gate drivers are engineered to effortlessly adapt to your specific application requirements. Our gate driver ICs boast multiple voltage classes, including 200 V, 500-700 V, and 1200 V, enabling you to tailor the perfect solution for your power needs. Our team of experts has spent decades perfecting gate drive circuits for silicon and wide-bandgap power devices. As a result, our gate driver ICs bring out the full potential of these advanced switch families, enabling you to extract maximum efficiency and performance from your power electronics.

Introduction to three phase drivers

Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs, and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualified gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and non-isolated low-side drivers.

Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate driver configuration is essential for all power switches, whether they are in discrete form or in a power module.

Details about the three phase drivers

Our cutting-edge three-phase gate driver IC solutions are the ultimate choice for driving power devices like MOSFETs and IGBTs. At the heart of our gate driver ICs lies the innovative silicon-on-insulator (SOI) technology, meticulously crafted to provide exceptional ruggedness and noise immunity. Our gate drivers perform optimally even in the most challenging environments, delivering unparalleled reliability and efficiency.

Additional information about three phase drivers

We offer a comprehensive portfolio of gate driver ICs. Our gate drivers are engineered to effortlessly adapt to your specific application requirements. Our gate driver ICs boast multiple voltage classes, including 200 V, 500-700 V, and 1200 V, enabling you to tailor the perfect solution for your power needs. Our team of experts has spent decades perfecting gate drive circuits for silicon and wide-bandgap power devices. As a result, our gate driver ICs bring out the full potential of these advanced switch families, enabling you to extract maximum efficiency and performance from your power electronics.

Documents

Documents

News & highlights

Untitled Project

Infineon offers a convenient solution for the replacement of barrel type connectors in favor of the ubiquitous and upcoming standard, USB-C. The Infineon EZ-PD™ BCR family is engineered with features that cater to the design needs of existing and future electronic devices. For easy implementation and extensive support Infineon is the best choice.

Gate Driver Solutions - Why Infineon is the best Partner

This training provides an insight about the system benefits of wide-bandgap devices, which will conquer market share in areas where power density, efficiency and/or battery range are decisive. The training focuses on two applications, mobile chargers and on-board chargers, and will talk about the challenges faced by the solutions today and how SiC and GaN provide next levels of performance.

Advantages of Infineon SOI Gate Driver Technology

1200 V Silicon-On-Insulators level-shift gate drivers from the market leader. This video demonstrates the advantages of products with Infineon SOI. E.g. Integrated bootstrap diode, Low level-shift losses - saving space and cost.

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.