Overview

Infineon's single-channel MOSFET gate driver ICs serve as the essential link connecting control ICs, powerful MOSFETs, and GaN switching devices. Infineon’s gate driver ICs enable high system-level efficiencies, excellent power density, and consistent system robustness.

Key features
  • 4.2 V and 8 V UVLO options
  • Propagation delay acc. +6/-4 ns
  • 4 A source driving capability
  • 8 A sink driving capability
  • 5 A rev. output current robustness
  • Industry standard pinout
  • Industry standard packages

Products

About

EiceDRIVER™ 1EDN gate driver for MOSFETs

The EiceDRIVER™ 1EDN gate driver for MOSFETs provides highly efficient SMPS enabled by 5 ns short slew rates and ±5 ns propagation delay precision for fast MOSFET and GaN switching. The product family is available in SOT-23 5pin and 6pin as well as in WSON 6pin packages that are fully compatible with industry standards to make system design upgrades easier.

Excellent power density and consistent system robustness

The EiceDRIVER™ 1EDN gate driver for MOSFETs is the new reference in terms of robustness and low power dissipation by combining several features. The -10 V ruggedness of the control and enable inputs provide a critical safety margin when driving pulse transformers. It is 5 A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages. The 4.2 V and 8 V UVLO (Under Voltage Lock Out) options offer instant MOSFET protection during startup and abnormal conditions. Use of true rail-to-rail low impedance output stages to support low power dissipation. 

Separate outputs simplify the application design process

The EiceDRIVER™ 1EDN gate driver for MOSFETs offers several features to simplify the application design process. The use of separate source and sink outputs, industry-standard packages, and pinouts helps to simplify application design. In addition, by using the 1EDN gate driver ICs, customers can make savings in other areas such as the size of the BoM and the area of the PCB.

EiceDRIVER™ 1EDN gate driver for MOSFETs

The EiceDRIVER™ 1EDN gate driver for MOSFETs provides highly efficient SMPS enabled by 5 ns short slew rates and ±5 ns propagation delay precision for fast MOSFET and GaN switching. The product family is available in SOT-23 5pin and 6pin as well as in WSON 6pin packages that are fully compatible with industry standards to make system design upgrades easier.

Excellent power density and consistent system robustness

The EiceDRIVER™ 1EDN gate driver for MOSFETs is the new reference in terms of robustness and low power dissipation by combining several features. The -10 V ruggedness of the control and enable inputs provide a critical safety margin when driving pulse transformers. It is 5 A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages. The 4.2 V and 8 V UVLO (Under Voltage Lock Out) options offer instant MOSFET protection during startup and abnormal conditions. Use of true rail-to-rail low impedance output stages to support low power dissipation. 

Separate outputs simplify the application design process

The EiceDRIVER™ 1EDN gate driver for MOSFETs offers several features to simplify the application design process. The use of separate source and sink outputs, industry-standard packages, and pinouts helps to simplify application design. In addition, by using the 1EDN gate driver ICs, customers can make savings in other areas such as the size of the BoM and the area of the PCB.

Documents

Documents