Active and preferred

IRHYS9A7234CM

Data Sheet
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IRHYS9A7234CM
IRHYS9A7234CM
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R9
  • ID (@100°C) max
    10.5 A
  • ID (@25°C) max
    17 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    300
  • Package
    TO-257AA Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    34 nC
  • QPL Part Number
    2N7649T3
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    110 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO257-3
Package Name TO-257AA LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO257-3
Package Name TO-257AA LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The IRHYS9A7234CM R9 N-channel MOSFET is a rad hard device suitable for space applications with improved immunity to Single Event Effects (SEE). The device has a maximum voltage of 250V and can handle a current of up to 17A. With low RDS(on) and faster switching times, it reduces power losses and increases power density in high-speed switching applications. Its electrical performance can withstand Linear Energy Transfer (LET) up to 90MeV·cm2/mg.

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