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IRHNS9A7160

Data Sheet
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IRHNS9A7160
IRHNS9A7160
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R9
  • ID (@100°C) max
    93 A
  • ID (@25°C) max
    100 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    300
  • Package
    SupIR-SMD
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    195 nC
  • QPL Part Number
    2N7653U2A
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    6.5 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The R9 SupIR-SMD packaged N-channel MOSFET is a 100V, 100A rad hard device designed for space applications. Its electrical performance of up to 100krad(Si) TID classification make it a reliable and cost-effective choice. With low RDS(on) and fast switching times, it provides high power density and reduces power losses. Its MOSFET advantages include voltage control, fast switching, and temperature stability.

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