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IRHN57250SESCS

Data Sheet
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IRHN57250SESCS
IRHN57250SESCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    5
  • ESD Class
    Class 3A
  • Generation
    R5
  • ID (@100°C) max
    19 A
  • ID (@25°C) max
    31 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100
  • Package
    SMD-1
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    132 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    60 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IRHN57250SESCS R5 N-channel MOSFET is a 200V, 31A rad hard device for space applications. Featuring low RDS(on) and a low gate charge, it reduces power losses and maintains established MOSFET benefits such as voltage control, fast switching, and temperature stability. Characterized for SEE up to LET 80 MeV·cm2/mg with a QIRL classification, it is available in a SMD-1 package.

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